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>> Past projects > ANCD 19.80013.16.02.01F/BL

Institute of Applied Physics
5 Academiei str.
Chisinau, MD-2028
MOLDOVA (Rep. of)
phone: +(373) 22 738150
fax: +(373) 22 738149
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Project ANCD 19.80013.16.02.01F/BL The growth of the Cu2Zn1-xCdxSnS4 solid solutions and the study of their physico-chemical and physical properties for the design of the solar photoconverters

Type : International bilateral project, funded by the National Agency for Research and Development of the Republic of Moldova and the State Committee for Science and Technology of the Republic of Belarus
Head : Ernest Arushanov, acad. ASM, Dr.Sci., prof.
Duration : 2019 - 2020
Division(s) : Laboratory of Materials for Photovoltaics and Photonics

The main purpose of this project was to determine the type of chemical interaction in the Сu2ZnSnS4 – Cu2CdSnS4 solid solution system, through different methods of physico-chemical analysis. These include determination of the regions of solubility, and of the optimal regime of the temperatures for syntesis and the growth of Cu2ZnSnS4, Сu2CdSnS4 single crystals and Cu2Zn1-xCdxSnS4 solid solutions, as well as analysis of the main laws for change of physico-chemical, physiscal, optical and electrical properties of these materials.

To achieve the proposed project goal, the following objectives were proposed:

1) Investigation of the phase diagram of the Сu2ZnSnS4 – Cu2CdSnS4 system and determination of the optimal crystal synthesis and growth parameters by melt-oriented crystallization (Bridgman method) and from the gaseous phase (chemical vapor transport method);

2) Compositional and structural characterization of Cu2ZnSnS4, Сu2CdSnS4 single crystals, and of Cu2Zn1-xCdxSnS4 solid solutions using the micro-X-ray-spectral and X-ray analysis;

3) Analysis of the dependence of the elementary cell parameters, density, microdurance and band gap of Cu2Zn1-xCdxSnS4 solid solutions from the chemical composition.

Study of photoluminescence and Raman spectra, as well as of electrical transport properties of the materials mentioned above.

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